Two Ph.D. Student Positions: I am seeking to recruit one highly motivated PhD student to join my team (and the EE PhD program) on an NSF-funded center, starting in January of 2026 or until positions are filled. The position focuses on research in the application and development of AI modeling in ultra-wide bandgap (UWBG) semiconductor processes.
Requirements:
- Must have all requirements for the EE PhD program at Texas State University
- Must hold a M.S. in ECE, CS, or another related field by the time of appointment
- Must have written a Masters Thesis work
- Must be a US citizen or US Permanent Resident
- Highly self-motivated and proactive, with exemplary scientific problem-solving skills
- Demonstrated ability to work independently as well as with teams
- Demonstrated publication record in applied AI development
- Motivated in producing publications and aid in writing research proposals
- Motivated in mentoring masters and undergraduate students
- Salaried and tuition stipend with the position.
- Email your CV, transcript, and cover letter to dvalles@txstate.edu
- Details about the HiPE group can be found here: https://hipe.wp.txstate.edu/
NSF CREST Center:
This project aims to facilitate a center for ultrawide bandgap semiconductor device materials and education. The project plans to combine semiconductor materials fabrication, processing, and characterization strategies along with modern Artificial Intelligence (AI). The researchers will focus on ultrawide bandgap (UWBG) semiconductors for next-generation devices operating at high power, high frequency, and under extreme conditions (temperature, radiation, corrosion, etc.). The center will also train and develop the next generation of technology leaders comprised of graduate and undergraduate students, and postdoctoral researchers. The project is part of a strategic goal of sustaining and developing research capacity to be a leading research institution in the UWBG semiconductor field within this decade.
The aims of the research are interconnected via three subprojects. First, implement new fabrication, processing, and doping strategies to produce novel UWBG heterointerfaces. Second, develop new scanning probe microscopy based UWBG characterization techniques to interrogate UWBG heterointerfaces. And third, develop UWBG material aware AI-based models to investigate materials and heterostructures. UWBG semiconductors are an emerging class of materials for future technological demands of tremendously large power handling capacity and high switching speed for high power electronics. The Centers of Research Excellence in Science and Technology (CREST) program provides support to enhance the research capabilities of institutions through the establishment of centers that effectively integrate education and research. The Engineering Research Centers program supports collaborative, interdisciplinary research partnerships between universities and industry to advance engineered systems, drive technological innovation and cultivate a globally competitive engineering workforce for significant societal impact.
Award link: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2514718&HistoricalAwards=false
